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PMC - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Numéro de référence BU807
Description NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Fabricant PMC 
Logo PMC 





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BU807 fiche technique
BU807
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
…designed for use in horizontal output stages of video displays.
MAXIMUM RATINGS (Tc = 25 °C)
Characteristic
Symbol
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
ICP*
Base Current
IB
Collector Dissipation Tc = 25 °C
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Value
330
150
6
8
15
2
60
150
-55 ~150
Unit
V
V
V
A
A
A
W
°C
°C
TO-220AB
1 : Base
2 : Collector (Heat Sink)
3 : Emitter
Weight: 1.9g
Unit in mm
ELECTRICAL CHARACTERISTICS (Tc = 25 °C)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
ICES
VCE =330V, VBE =0
Collector Cutoff Current
ICEV
VCE =330V, VBE =-6V
Emitter Cutoff Current
IEBO
VBE =6V, IC =0
*Collector Emitter Saturation
VCE(sat) IB =50mA, IC =5A
Voltage
*Base Emitter Saturation Voltage
VBE(sat) IB =50mA, IC =5A
*Collector Emitter Sustaining
VCEO(sus) IB =0, IC =100mA
Voltage
*Damper Diode Forward Voltage
VF IF =4A
*Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
100
100
3
1.5
Unit
µA
µA
mA
V
- - 2.4 V
150 - - V
--2V
NPN EPITAXIAL
SILICON
DARLINGTON
TRANSISTOR
TO-220AB
PMC reserves the right to make changes without further notice to any products herein. PMC makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does PMC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the
reader therefore we shall not undertake any responsibility for the exercise of rights by third parties.
PMC Components Pte Ltd. , Singapore, 2000

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