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Numéro de référence | BGM1013 | ||
Description | MMIC wideband amplifier | ||
Fabricant | NXP Semiconductors | ||
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1 Page
BGM1013
MMIC wideband amplifier
Rev. 5 — 19 September 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Internally matched to 50
Good output match to 75
Very high gain; 35.5 dB at 1 GHz
Upper corner frequency at 2.1 GHz
31 dB flat gain up to 2.2 GHz application
14 dBm saturated output power at 1 GHz
High linearity (23 dBm IP3out and 43 dBc IM2)
40 dB isolation.
1.3 Applications
Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers
Cable systems
General purpose.
1.4 Quick reference data
Table 1.
Symbol
VS
IS
s212
NF
PL(sat)
Quick reference data
Parameter
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
Conditions
RF input; AC coupled
f = 1 GHz
f = 1 GHz
f = 1 GHz
Min Typ Max Unit
- 56V
23 27.5 33 mA
34.5 35.5 36.2 dB
- 4.6 4.7 dB
13.0 14.0 -
dBm
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Pages | Pages 15 | ||
Télécharger | [ BGM1013 ] |
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