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Número de pieza | MTB013N10RH8 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB013N10RH8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C056H8
Issued Date : 2016.08.29
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTB013N10RH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDSON(TYP)
VGS=10V, ID=15A
VGS=4.5V, ID=10A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
100V
42A
14.3A
9.8mΩ
11.1mΩ
Symbol
MTB013N10RH8
G:Gate D:Drain S:Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB013N10RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB013N10RH8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C056H8
Issued Date : 2016.08.29
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
100
10
0
100
10
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
VDS=15V
6
1
4
0.1
0.01
0.001
1000
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
100 Limited
100μs
10
1 TC=25°C, Tj=150°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1ms
10ms
100ms
1s
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
2 VDS=80V
ID=15A
0
0 5 10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10 VGS=10V, Tj(max)=150°C,
RθJC=2.5°C/W
5
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB013N10RH8
CYStek Product Specification
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet MTB013N10RH8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB013N10RH8 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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