|
|
PDF MTB030N10RE3 Data sheet ( Hoja de datos )
| Número de pieza | MTB030N10RE3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTB030N10RE3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB030N10RE3
Spec. No. : C053E3
Issued Date : 2016.08.26
Revised Date :
Page No. : 1/ 8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=15A
100V
29A
5.5A
26.4 mΩ(typ)
30.8 mΩ(typ)
Symbol
MTB030N10RE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
Package
Shipping
MTB030N10RE3-0-UB-X
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB030N10RE3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C053E3
Issued Date : 2016.08.26
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
1000
Capacitance vs Drain-to-Source Voltage
Ciss
C oss
100
10
1
0
Crss
10 20 30 40
VDS, Drain-Source Voltage(V)
50
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
0.8
0.6
0.4 ID=250μA
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
0.1
0.01
0.001
1000
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
100 RDS(ON)
Limited
10μs
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=2.5°C/W
single pulse
100μs
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
2 VDS=80V
ID=20A
0
0 4 8 12 16 20 24 28
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
40
35
30
25
20
15
10
5 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB030N10RE3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTB030N10RE3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTB030N10RE3 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |