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PDF MTB030P06KH8 Data sheet ( Hoja de datos )
| Número de pieza | MTB030P06KH8 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
Page No. : 1/10
P-Channel Enhancement Mode Power MOSFET
MTB030P06KH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDS(ON)@VGS=-10V, ID=-6A
RDS(ON)@VGS=-4.5V, ID=-4A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• RoHS compliant package
RDS(ON)@VGS=-4V, ID=-3A
-60V
-34A
-5.9A
21.4 mΩ(typ)
35.6 mΩ(typ)
42.6 mΩ(typ)
Symbol
MTB030P06KH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB030P06KH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB030P06KH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
Page No. : 5/10
Typical Characteristics
Typical Output Characteristics
100
Tj=25°C
-10V, -9V,-8V
80
-7V
60 -6V
40 -5V
20
0
0
-4.5V
-4V
VGS=-3.5V
2 46 8
-VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
100
VGS=-4.5V VGS=-4V
Normalized Brekdown Voltage vs Ambient
Temperature
1.4
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
VGS=-10V
10
0.1
1 10
-ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400 ID=-6A
350
300
250
200
150
100
50
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
0.6 Tj=150°C
0.4
0.2
0
4 8 12 16
-IS, Source Drain Current(A)
20
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
2.2
2 VGS=-10V, ID=-6A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4 RDS(ON)@Tj=25°C : 21.4mΩ typ.
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB030P06KH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTB030P06KH8.PDF ] | |
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