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Número de pieza | MTB032P06V8 | |
Descripción | P-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB032P06V8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB032P06V8 BVDSS
ID
RDSON@VGS=10V, ID=-6A
RDSON@VGS=-4.5V, ID=-4A
-60V
-25A
29mΩ(typ)
33mΩ(typ)
Description
The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB032P06V8
Outline
Pin 1
DFN3×3
G:Gate S:Source D:Drain
Ordering Information
Device
MTB032P06V8-0-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB032P06V8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Normalized Threshold Voltage vs Junction
Tempearture
1.4
ID=-250μA
1.2
1000
100
C oss
Crss
1
0.8
0.6
0.4
10
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=-5V
0.1 Pulsed
Ta=25°C
0.2
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-48V
8 ID=-6A
6
4
2
0.01
0.001
0.01 0.1
1
-ID, Drain Current(A)
10
100
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
Limite
10
100μs
1ms
10ms
1 100m
TA=25°C, Tj=150°C
0.1 VGS=-10V, RθJA=50°C/W
Single Pulse
1s
DC
0.01
0.01
0.1 1
10
-VDS, Drain-Source Voltage(V)
100
Maximum Drain Current vs JunctionTemperature
8
7
6
5
4
3
2
1 TA=25°C, VGS=-10V,θJA=50°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB032P06V8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB032P06V8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB032P06V8 | P-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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