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PDF MTB04N03AQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTB04N03AQ8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB04N03AQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C889Q8
Issued Date : 2013.12.02
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03AQ8 BVDSS
ID @VGS=10V
RDSON@VGS=10V, ID=18A
RDSON@VGS=4.5V, ID=12A
30V
20A
4.4mΩ(typ)
5.8mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Symbol
MTB04N03AQ8
Outline
Pin 1
SOP-8
G：Gate D：Drain S：Source
Ordering Information
Device
MTB04N03AQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03AQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C889Q8
Issued Date : 2013.12.02
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
100
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
1000
100
RDS(ON
)
Limit
Maximum Safe Operating Area
10
1
0.1
TA=25°C, Tj=150°C
VGS=10V, RθJA=50°C/W
Single Pulse
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100m
DC
100
1.2
1 ID=1mA
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 ID=18A
6
4
2
0
0 10 20 30 40 50 60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
25
20
15
10
5
VGS=10V, RθJC=25°C/W
0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
MTB04N03AQ8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB04N03AQ8.PDF ] | |
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