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Número de pieza | MTB090N06I3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB090N06I3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C420I3
Issued Date : 2014.07.11
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB090N06I3 BVDSS
ID@VGS=10V
RDSON(TYP)
VGS=10V, ID=3A
VGS=4.5V, ID=2A
60V
5A
70mΩ
82mΩ
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTB090N06I3
Outline
TO-251
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
MTB090N06I3-0-UJ-G
Package
Shipping
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 100 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec,UJ : 80 pcs / tube, 100 tubes/box
Product rank, zero for no rank products
Product name
MTB090N06I3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C420I3
Issued Date : 2014.07.11
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C oss
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2 ID=1mA
1
0.8
0.6
0.4 ID=250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=48V
8
VDS=30V
6
0.1
0.01
0.001
100
VDS=15V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
10
RDS(ON)
Limit
100μ s
1 1ms
10ms
100ms
0.1 1s
TA=25°C, Tj=150°, VGS=10V
RθJA=50°C/W, Single Pulse
DC
0.01
0.01 0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
4
2
ID=5A
0
0 2 4 6 8 10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
6
5
4
3
2
1 TA=25°C, Tj=150°C, VGS=10V,
RθJA=50°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB090N06I3
CYStek Product Specification
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MTB090N06I3.PDF ] |
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