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PDF MTC3587DL8 Data sheet ( Hoja de datos )
| Número de pieza | MTC3587DL8 | |
| Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTC3587DL8 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date :
Page No. : 1/13
N- and P-Channel Enhancement Mode Power MOSFET
MTC3587DL8
BVDSS
ID @ TA=25°C
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
RDSON(TYP.)
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
20V
4.9A(VGS=4.5V)
32mΩ(VGS=4.5V)
43mΩ(VGS=2.5V)
62mΩ(VGS=1.8V)
P-CH
-20V
-3.9A(VGS=-4.5 V)
50mΩ(VGS=-4.5V)
62mΩ(VGS=-2.5V)
81mΩ(VGS=-1.8V)
Equivalent Circuit
MTC3587DL8
Outline
DFNWB3×2-8L-B
G：Gate S：Source D：Drain
Ordering Information
Device
MTC3587DL8-0-T1-G
Package
DFNWB3×2-8L-B
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTC3587DL8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date :
Page No. : 5/13
Q1, N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
Crss 0.6 ID=250μA
10
0
4 8 12 16
VDS, Drain-Source Voltage(V)
20
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
VDS=5V
1
VDS=10V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
Gate Charge Characteristics
10
8
6
4
2 VDS=10V
ID=4.4A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
10
RDS(ON)
Limited
1
100μs
1ms
10ms
0.1
TA=25°C, Tj=150°C, VGS=4.5V
RθJA=85°C/W, Single Pulse
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100ms
1s
DC
100
MTC3587DL8
Maximum Drain Current vs JunctionTemperature
6
5
4
3
2
TA=25°C, VGS=4.5V
1 RθJA=85°C/W
0
25 50 75 100 125 150
TJ, Junction Temperature(°C)
175
CYStek Product Specification
5 Page 
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date :
Page No. : 11/13
Carrier Tape Dimension
MTC3587DL8
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTC3587DL8.PDF ] | |
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