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PDF MTE030N15RH8 Data sheet ( Hoja de datos )

Número de pieza MTE030N15RH8
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech Electronics 
Logotipo CYStech Electronics Logotipo



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No Preview Available ! MTE030N15RH8 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C838H8
Issued Date : 2016.09.08
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE030N15RH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDSON(TYP)
VGS=10V, ID=4.6A
VGS=6V, ID=3.9A
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
150V
24.7A
5.5A
29.3mΩ
33.6mΩ
Symbol
MTE030N15RH8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB030N15RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE030N15RH8
CYStek Product Specification

1 page




MTE030N15RH8 pdf
CYStech Electronics Corp.
Spec. No. : C838H8
Issued Date : 2016.09.08
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
100
Crss
10
0
100
10
10 20 30 40 50 60 70 80
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
VDS=10V
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=30V
8 VDS=75V
6
1 VDS=15V
4
VDS=120V
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
100
RDSON
Limited
10
100μs
1 1m
10ms
0.1
TA=25°C, VGS=10V,Tj=150°C
RθJA=50°C/W, Single Pulse
0.01
100ms
1s
DC
0.1 1
10 100 1000
-VDS, Drain-Source Voltage(V)
2
ID=4.6A
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
7
6
5
4
3
2
VGS=10V, Tj(max)=150°C,
1 RθJA=50°C/W
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTE030N15RH8
CYStek Product Specification

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