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PDF MTE3D5N06F3 Data sheet ( Hoja de datos )
| Número de pieza | MTE3D5N06F3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE3D5N06F3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C912F3
Issued Date : 2016.10.05
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE3D5N06F3 BVDSS
ID @VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=30A
RDSON(TYP) @ VGS=7V, ID=20A
60V
80A
3.6mΩ
3.8mΩ
Features
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTE3D5N06F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
Package
Shipping
MTE3D5N06F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE3D5N06F3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C912F3
Issued Date : 2016.10.05
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
100
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=30V
8 VDS=12V
6
4 VDS=48V
2
ID=30A
0
0 10 20 30 40 50 60 70 80
Total Gate Charge---Qg(nC)
1000
100
RDS(ON)
Limit
Maximum Safe Operating Area
10μs
100μs
10
1
TC=25°C, Tj=175°, VGS=10V
RθJC=0.8°C/W, Single Pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
160
140 silicon limit
120
100
80
60
40 package limit
20 VGS=10V, RθJC=0.8°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE3D5N06F3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTE3D5N06F3.PDF ] | |
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