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PDF MTN6T62KJ3 Data sheet ( Hoja de datos )
| Número de pieza | MTN6T62KJ3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C086J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTN6T62KJ3
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=2.8A
620V
5.5A
1Ω(typ)
Features
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD Protected Gate
• RoHS compliant package
Symbol
MTN6T62KJ3
Outline
TO-252
D
G：Gate D：Drain S：Source
S
D
G
Ordering Information
Device
MTN6T62KJ3-0-T3-G
Package
TO-252
(RoHS compliant and halogen-free package)
Shipping
2500 pcs/tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN6T62KJ3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C086J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 5/11
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Brekdown Voltage vs Ambient Temperature
1.4
Ciss
1.2
1000
Coss
100
f=1MHz
Crss
10
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
1ms 100μs 10μs
RDS(ON)
10 Limited
10ms
1 100ms
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=1.4°C/W
Single pulse
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
7
6
5
4
3
2
1 VGS=10V, RθJC=1.4°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
1.0
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=124V
8 VDS=310V
6
VDS=496V
4
2
0
0
1.4
ID=5.5A
6 12 18 24 30
Qg, Total Gate Charge(nC)
36
Threshold Voltage vs Junction Tempearture
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN6T62KJ3
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
TO-252 Dimension
Spec. No. : C086J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 11/11
Marking:
4
Device
Name
Date
Code
CYS
6T62K
□□□□
123
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
Inches
Min. Max.
Millimeters
Min. Max.
DIM
Inches
Min. Max.
Millimeters
Min. Max.
A 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386
A1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772
B 0.039 0.048 0.990 1.210 H
0.163 REF
4.140 REF
b 0.026 0.034 0.660 0.860 K
0.190 REF
4.830 REF
b1 0.026 0.034 0.660 0.860 L 0.386 0.409 9.800 10.400
C 0.018 0.023 0.460 0.580 L1
0.114 REF
2.900 REF
C1 0.018 0.023 0.460 0.580 L2 0.055 0.067 1.400 1.700
D 0.256 0.264 6.500 6.700 L3 0.024 0.039 0.600 1.000
D1 0.201 0.215 5.100 5.460 P
0.026 REF
0.650 REF
E 0.236 0.244 6.000 6.200 V
0.211 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN6T62KJ3
CYStek Product Specification
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MTN6T62KJ3.PDF ] | |
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