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PDF TLE4965-5M Data sheet ( Hoja de datos )
| Número de pieza | TLE4965-5M | |
| Descripción | High Precision Automotive Hall Effect Switch | |
| Fabricantes | Infineon | |
| Logotipo |  |
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High Precision Automotive Hall Effect Switch
for 5V Applications
TLE4965-5M
SP000978610
Hall Effect Switch
Data Sheet
Revision 1.0, 2016-01-12
Sense & Control
1 page  
TLE4965-5M
Product Description
1 Product Description
1.1 Overview
The TLE4965-5M is a high precision Hall effect unipolar switch with highly accurate switching thresholds for
operating temperatures up to 170°C.
Characteristic
Unipolar Hall
Effect Switch
Supply Voltage
3.0 ~ 5.5 V
Supply Current
1.5 mA
Sensitivity
High
BOP: 7.5 mT
BRP: 5.0 mT
Interface
Open Drain
Output
Temperature
-40°C to 170°C
Figure 1 Image of TLE4965-5M in the PG-SOT23-3-15 Package
1.2 Features
• 3.0 V to 5.5 V operating supply voltage
• Operation from regulated power supply
• Active error compensation
• High stability of magnetic thresholds
• Low jitter (typ. 0.28 μs)
• 4kV ESD (HBM) performance
• Small SMD package PG-SOT23-3-15
1.3 Target Applications
Target applications for the TLE4965-5M Hall switch are all applications which require a high precision Hall
Switch with an operating temperature range from -40°C to 170°C.
The TLE4965-5M is a unipolar switch with a typical operating point BOP = 7.5mT and a hysteresis of BHYS =
2.5mT. It is ideally suited for various position detection applications, e.g. gear stick, steering lock or brake
light.
Table 1 Ordering Information
Product Name
Product Type
TLE4965-5M
Unipolar Hall Switch
Data Sheet
Ordering Code
SP000978610
5
Package
PG-SOT23-3-15
Revision 1.0 2016-01-12
5 Page 
TLE4965-5M
Specification
3.2 Absolute Maximum Ratings
Table 3 Absolute Maximum Rating Parameters
Parameter
Symbol
Values
Unit Note or Test Condition
Min. Typ. Max.
Supply voltage
Output voltage
Junction
temperature1)
VDD -0.3
VQ -0.5
TJ -40
6V
6V
155 °C for 2000h (not additive)
165 for 1000h (not additive)
175 for 168h (not additive)
195 for 3 x 1h (additive)
Thermal resistance
Junction ambient
RthJA
300 K/W for PG-SOT23-3-15 (2s2p)
Thermal resistance
Junction lead
RthJL
100 K/W for PG-SOT23-3-15
1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual
lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement.
The lifetime statement shall in no event extend the agreed warranty period.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example):
e.g. for: VDD = 5 V, IS = 2 mA, VQSAT = 0.5 V, IQ = 1 mA
Power dissipation: PDIS = 5 V x 2 mA + 0.5 V x 1 mA = 10 mW + 0.5 mW = 10.5 mW
Temperature ΔT = RthJA x PDIS = 300 K/W x 10.5 mW = 3.15 K
For TA = 150 °C: TJ = TA + ΔT = 150 °C + 3.15 K = 153.15 °C
Table 4 ESD Protection1) (TA = 25°C)
Parameter
Symbol
Values
Unit Note or Test Condition
Min. Typ. Max.
ESD voltage (HBM)2)
ESD voltage (CDM)3)
VESD
-4
-1
4 kV R = 1.5 kΩ, C = 100 pF
1 kV
1) Characterization of ESD is carried out on a sample basis, not subject to production test.
2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.
3) Charged Device Model (CDM), ESD susceptibility according to JEDEC JESD22-C101.
Data Sheet
11 Revision 1.0 2016-01-12
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet TLE4965-5M.PDF ] | |
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