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PDF MTB100N10RKJ3 Data sheet ( Hoja de datos )
| Número de pieza | MTB100N10RKJ3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB100N10RKJ3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTB100N10RKJ3
Spec. No. : C059J3
Issued Date : 2016.09.01
Revised Date :
Page No. : 1/9
Features
• Low Gate Charge
• Simple Drive Requirement
• ESD protected gate
• Pb-free lead plating & Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=8A
RDSON@VGS=4.5V, ID=6A
100V
10A
108mΩ(TYP)
123mΩ(TYP)
Equivalent Circuit
MTB100N10RKJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB100N10RKJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB100N10RKJ3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C059J3
Issued Date : 2016.09.01
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
NormalizedThreshold Voltage vs Junction Tempearture
1.4
Ciss 1.2
ID=1mA
100 1
C oss
0.8
10
ID=250μA
Crss 0.6
1
0 10 20 30 40 50
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
RDS(ON)
Limited
10
10μs
100μs
1ms
1 10ms
TC=25°C, Tj=150°, VGS=10V
RθJC=4.1°C/W, Single Pulse
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8 VDS=20V
6
VDS=80V
4
2
ID=8A
0
01 2345 678
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
12
10
8
6
4
2 VGS=10V, RθJC=4.1°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTB100N10RKJ3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB100N10RKJ3.PDF ] | |
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