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Número de pieza | MTDA0A10DH8 | |
Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTDA0A10DH8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 1/ 9
Dual N-Channel Enhancement Mode Power MOSFET
MTDA0A10DH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
• Low On Resistance
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=2A
• Simple Drive Requirement
RDS(ON)@VGS=5V, ID=2A
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
100V
10A
6.3A
3A
2.4A
70mΩ(typ)
82mΩ(typ)
Equivalent Circuit
MTDA0A10DH8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device
MTDA0A10DH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDA0A10DH8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
10
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10 10
8
1
6
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
10
RDS(ON)
Limited
100μs
1 1ms
10ms
0.1 TA=25°C, Tj=150°, VGS=10V
RθJC=70°C/W, Single Pulse
100ms
1s
DC
0.01
0.01 0.1 1 10 100 1000
VDS, Drain-Source Voltage(V)
4
2 VDS=50V
ID=2A
0
0 2 4 6 8 10
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
4
3.5
3
2.5
2
1.5
1
0.5 VGS=10V, RθJA=70°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTDA0A10DH8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTDA0A10DH8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTDA0A10DH8 | Dual N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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