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PDF MTDA0N10AV8 Data sheet ( Hoja de datos )
| Número de pieza | MTDA0N10AV8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTDA0N10AV8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTDA0N10AV8 BVDSS
ID @ TC=25°C, VGS=10V
ID @ TA=25°C, VGS=10V
RDSON(TYP)
VGS=10V, ID=3A
VGS=5V, ID=3A
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
100V
8.5A
3.5A
74mΩ
84mΩ
Equivalent Circuit
MTDA0N10AV8
Outline
Pin 1
DFN3×3
G：Gate D：Drain S：Source
Ordering Information
Device
MTDA0N10AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDA0N10AV8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
10
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
10
1
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2 ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8
VDS=20V
6
0.1 VDS=10V
Pulsed
Ta=25°C
0.01
0.001
100
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
RDS(ON)
10 Limited
100μs
1 1ms
10ms
0.1 TA=25°C, Tj=150°C, VGS=10V
RθJA=50°C/W, Single Pulse
100ms
1s
DC
0.01
0.01 0.1 1 10 100 1000
VDS, Drain-Source Voltage(V)
4 VDS=80V
2
ID=3.5A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
4
3.5
3
2.5
2
1.5
1
0.5
TA=25°C, VGS=10V, RθJA=50°C/W
Single Pulse
0
25 50 75 100 125 150
Tj, Junctione Temperature(°C)
175
MTDA0N10AV8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTDA0N10AV8.PDF ] | |
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