|
|
PDF MTDA0N10J3 Data sheet ( Hoja de datos )
| Número de pieza | MTDA0N10J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTDA0N10J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C870J3
Issued Date : 2012.07.26
Revised Date : 2013.12.30
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTDA0N10J3 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=12A
VGS=5V, ID=10A
100V
16A
80mΩ
96mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTDA0N10J3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G DS
Ordering Information
Device
MTDA0N10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTDA0N10J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C870J3
Issued Date : 2012.07.26
Revised Date : 2013.12.30
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
100 C oss
0.8
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
Limited
10
1
100μs
1ms
10ms
100ms
1s
DC
0.1 TC=25°C, Tj=175°C
VGS=10V, θJC=2.5°C/W
Single Pulse
0.01
0.1 1
10 100
\ VDS, Drain-Source Voltage(V)
1000
0.6
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
10
VDS=80V
8 VDS=50V
VDS=20V
6
4
2 ID=10A
0
0 12 3 45 6
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
20
18
16
14
12
10
8
6
4
2 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTDA0N10J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTDA0N10J3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTDA0N10J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |