|
|
PDF MTDA0N10L3 Data sheet ( Hoja de datos )
| Número de pieza | MTDA0N10L3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTDA0N10L3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTDA0N10L3 BVDSS
ID
RDSON@VGS=10V, ID=3A
RDSON@VGS=5V, ID=2A
Description
100V
3.9A
77mΩ(typ)
87mΩ(typ)
The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Single Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTDA0N10L3
Outline
SOT-223
D
G：Gate D：Drain S：Source
S
D
G
Ordering Information
Device
MTDA0N10L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTDA0N10L3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C870L3
Issued Date : 2014.04.08
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
100 C oss
0.8
10
0.1
100
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
100
VDS=5V
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
RDSON
10 Limited
1
10μs
100μs
1ms
0.1 TA=25°C, Tj=150°C
VGS=10V, θJA=40°C/W
Single Pulse
10ms
100ms
DC
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=80V
8 VDS=50V
VDS=20V
6
4
2 ID=3A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5 VGS=10V, RθJA=40°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
200
MTDA0N10L3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTDA0N10L3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTDA0N10L3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |