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PDF MTE040P03N3 Data sheet ( Hoja de datos )
| Número de pieza | MTE040P03N3 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE040P03N3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C058N3
Issued Date : 2016.09.13
Revised Date :
Page No. : 1/9
-30V P-Channel Enhancement Mode MOSFET
MTE040P03N3 BVDSS
ID @ VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-4.5A
-30V
-4A
42mΩ(typ)
Features
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating package
Symbol
MTE040P03N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTE040P03N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTE040P03N3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C058N3
Issued Date : 2016.09.13
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1ms
1
10ms
0.1 TA=25°C, Tj=150°C,
VGS=-10V, RθJA=100°C/W,
single pulse
0.01
0.1
1 10
-VDS, Drain-Source Voltage(V)
100ms
1s
DC
100
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1.0
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Drain Current vs Junction Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1 VGS=-10V, Tj(max)=150°C,
0.5 RθJA=100°C/W, single pulse
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
Gate Charge Characteristics
10
8 VDS=-15V
6
VDS=-24V
4
2
ID=-4A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Single Pulse Power Rating, Junction to Case
300
250 TJ(MAX)=150°C
TA=25°C
200 RθJA=100°C/W
150
100
50
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
10 100
MTE040P03N3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTE040P03N3.PDF ] | |
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