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PDF STK534U342C-E Data sheet ( Hoja de datos )
| Número de pieza | STK534U342C-E | |
| Descripción | Intelligent Power Module | |
| Fabricantes | ON Semiconductor | |
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STK534U342C-E
Intelligent Power Module (IPM)
600 V, 5 A
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In
line Package). Output stage uses IGBT/FRD technology and implements Under
Voltage Protection (UVP). Internal Boost diodes are provided for high side gate
boost drive.
www.onsemi.com
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly compatible
with microcontrollers.
Built-in cross conduction prevention.
Externally accessible embedded thermistor for substrate temperature
measurement
Certification
UL1557 (File number: E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Ratings
Supply voltage
Collector-emitter voltage
VCC
VCE
P to U-, V-, W-, surge < 500 V
*1
P to U, V, W or U, V, W, to U-, V-, W-
450
600
Output current
P,U-,V-,W-,U,V,W terminal current
Io
P,U-,V-,W-,U,V,W terminal current, Tc = 100C
±5
±3
Output peak current
Iop P,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms
±10
Pre-driver voltage
Input signal voltage
FLTEN terminal voltage
VD1,2,3,4
VIN
VFLTEN
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
FLTEN terminal
*2
20
0.3 to VDD
0.3 to VDD
Maximum power dissipation
Pd
IGBT per 1 channel
27.7
Junction temperature
Tj
IGBT, FRD, Pre-Driver IC
150
Storage temperature
Tstg
40 to +125
Operating case temperature
Tc
IPM case
20 to +100
Tightening torque
A screw part
*3
0.9
Withstand voltage
Vis 50 Hz sine wave AC 1 minute *4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between P and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS.
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 s.
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September 2016 - Rev. 1
1
Publication Order Number :
STK534U342C-E/D
1 page  
STK534U342C-E
Test Circuit
(The tested phase : U+ shows the upper side of the U phase and U- shows the lower side of the U phase.)
ICE / IR(BD)
U+ V+ W+ U- V- W-
M
13 13 13 10 6
2
N
10 6
2 17 19 21
U(BD) V(BD) W(BD)
M 951
N 29 29 29
VCE(SAT) (Test by pulse)
U+ V+ W+ U- V- W-
M
13 13 13 10 6
2
N
10 6
2 17 19 21
m 20 22 23 24 25 26
Fig.1
VF (Test by pulse)
U+ V+ W+ U- V- W-
M
13 13 13 10 6
2
N
10 6
2 17 19 21
ID
M
N
VD1 VD2 VD3
951
10 6
2
VD4
28
29
www.onsemi.com
5
Fig.2
Fig.3
Fig.4
5 Page 
STK534U342C-E
The characteristic of thermistor
Parameter
Symbol
Condition
Min
Typ.
Max Unit
Resistance
Resistance
B-Constant (25 to 50C)
Temperature Range
R25
R125
B
T = 25C
T = 125C
97
4.93
4165
40
100
5.38
4250
1034
5.88
4335
+125
kΩ
kΩ
k
C
This data shows the example of the application circuit, does not guarantee a design as the mass production set.
Fig.10 Variation of thermistor resistance with temperature
Condition
Pull-up resistor = 39k
Pull-up voltage of TH = 5V
Fig.11 Variation of temperature sense voltage with thermistor temperature
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11
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