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CEE02N6G fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEE02N6G
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEE02N6G fiche technique
CEE02N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 2.0A, RDS(ON) = 5.0@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-126 package.
D
G
CEE SERIES
TO-126
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
600
±30
2
8
56
0.44
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.3
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2012.Mar
http://www.cetsemi.com

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