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MSC0203S fiches techniques PDF

MORESEMI - N and P-Channel Enhancement Mode Power MOS FET

Numéro de référence MSC0203S
Description N and P-Channel Enhancement Mode Power MOS FET
Fabricant MORESEMI 
Logo MORESEMI 





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MSC0203S fiche technique
MSC0203S
N and P-Channel Enhancement Mode Power MOS FET
General Features
N-Channel
VDS = 20V,ID = 3A
RDS(ON) < 65m@ VGS=4.5V
RDS(ON) < 90m@ VGS=2.5V
P-Channel
VDS = -20V,ID = -3A
RDS(ON) < 110m@ VGS=-4.5V
RDS(ON) < 140m@ VGS=-2.5V
Lead Free
High power and current handing capability
Lead free product is acquired
Surface mount package
pin Assignment
PIN Configuration
SOT-23-6L top view
N-channel
P-channel
Package Marking and Ordering Information
Device Marking
Device
MSC0203S
Device Package
SOT-23-6L
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS 20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25
TA=70
TA=25
VGS ±12
3
ID
2.4
IDM 13
PD 0.8
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
P-Channel
-20
±12
-3
-2.4
-13
0.8
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
RθJA
N-Ch
P-Ch
156
156
Unit
V
V
A
A
W
/W
/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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