|
|
Numéro de référence | MSC0203S | ||
Description | N and P-Channel Enhancement Mode Power MOS FET | ||
Fabricant | MORESEMI | ||
Logo | |||
MSC0203S
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel
VDS = 20V,ID = 3A
RDS(ON) < 65mΩ @ VGS=4.5V
RDS(ON) < 90mΩ @ VGS=2.5V
● P-Channel
VDS = -20V,ID = -3A
RDS(ON) < 110mΩ @ VGS=-4.5V
RDS(ON) < 140mΩ @ VGS=-2.5V
Lead Free
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
pin Assignment
PIN Configuration
SOT-23-6L top view
N-channel
P-channel
Package Marking and Ordering Information
Device Marking
Device
MSC0203S
Device Package
SOT-23-6L
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS 20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25℃
TA=70℃
TA=25℃
VGS ±12
3
ID
2.4
IDM 13
PD 0.8
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
P-Channel
-20
±12
-3
-2.4
-13
0.8
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
RθJA
N-Ch
P-Ch
156
156
Unit
V
V
A
A
W
℃
℃/W
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/10
|
|||
Pages | Pages 10 | ||
Télécharger | [ MSC0203S ] |
No | Description détaillée | Fabricant |
MSC0203S | N and P-Channel Enhancement Mode Power MOS FET | MORESEMI |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |