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PDF MSC09N74X Data sheet ( Hoja de datos )

Número de pieza MSC09N74X
Descripción 100V N-Channel MOSFETs
Fabricantes Bruckewell 
Logotipo Bruckewell Logotipo



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MSC09N74X
100V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
100V, 70A , RDS(ON) =6.5mΩ @VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
RoHS compliant package
Applications
Networking
Load Switch
LED applications
Quick Charger
Packing & Order Information
Shipping3,000/Reel
PPAK5X6 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current - Continuous (TC=25°C)
Drain Current - Continuous (TC=100°C)
IDM Drain Current - Pulsed1
Value
100
±20/-12
70
44
280
Unit
V
V
A
A
A
Publication Order Number: [MSC09N74X]
© Bruckewell Technology Corporation Rev. A -2014

1 page




MSC09N74X pdf
MSC09N74X
100V N-Channel MOSFETs
Characteristics Curve
FIG.7-SWITCHING TIME WAVEFORM
FIG.8-EAS WAVEFORM
Publication Order Number: [MSC09N74X]
© Bruckewell Technology Corporation Rev. A -2014

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