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Numéro de référence | MSC0207GE | ||
Description | Dual N-Channel Enhancement Mode Power MOS FET | ||
Fabricant | MORESEMI | ||
Logo | |||
MSC0207GE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =7A
RDS(ON) < 27mΩ @ VGS=2.5V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Lead Free
Application
●PWM application
●Load switch
PIN Configuration
Marking and pin assignment
TSSOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0207GE
MSC0207GE
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
30
1.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83.3 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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Pages | Pages 6 | ||
Télécharger | [ MSC0207GE ] |
No | Description détaillée | Fabricant |
MSC0207GE | Dual N-Channel Enhancement Mode Power MOS FET | MORESEMI |
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