DataSheetWiki


MSC0207GE fiches techniques PDF

MORESEMI - Dual N-Channel Enhancement Mode Power MOS FET

Numéro de référence MSC0207GE
Description Dual N-Channel Enhancement Mode Power MOS FET
Fabricant MORESEMI 
Logo MORESEMI 





1 Page

No Preview Available !





MSC0207GE fiche technique
MSC0207GE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
VDS = 20V,ID =7A
RDS(ON) < 27m@ VGS=2.5V
RDS(ON) < 21m@ VGS=4.5V
ESD Rating: 2000V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package
ESD protected
Lead Free
Application
PWM application
Load switch
PIN Configuration
Marking and pin assignment
TSSOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0207GE
MSC0207GE
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
30
1.5
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83.3 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6

PagesPages 6
Télécharger [ MSC0207GE ]


Fiche technique recommandé

No Description détaillée Fabricant
MSC0207GE Dual N-Channel Enhancement Mode Power MOS FET MORESEMI
MORESEMI

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche