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PDF MSC0211GE Data sheet ( Hoja de datos )
| Número de pieza | MSC0211GE | |
| Descripción | Dual N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSC0211GE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =11A
RDS(ON) < 7mΩ @ VGS=2.5V
RDS(ON) < 9mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Lead Free
Application
● PWM application
● Load switch
PIN Configuration
Marking and pin assignment
TSSOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0211GE
MSC0211GE
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±10
11
44
1.6
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
78 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSC0211GE
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSC0211GE.PDF ] | |
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