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PDF MSC0605W Data sheet ( Hoja de datos )

Número de pieza MSC0605W
Descripción Dual N-Channel Enhancement Mode Power MOS FET
Fabricantes MORESEMI 
Logotipo MORESEMI Logotipo



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MSC0605W
60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
VDS =60V,ID =4.5A
RDS(ON) < 45m@ VGS=10V
Typ38m
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Lead Free
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0605W
MSC0605W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
60
±20
4.5
3.0
20
2
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
62.5 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6

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MSC0605W pdf
MSC0605W
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
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