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PDF MSC0606W Data sheet ( Hoja de datos )
| Número de pieza | MSC0606W | |
| Descripción | P & N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSC0606W
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel
VDS = 60V,ID =6.3A
RDS(ON) < 30mΩ @ VGS=10V
● P-Channel
VDS = -60V,ID = -5A
RDS(ON) < 80mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
SOP-8 top view
N-channel
P-channel
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSC0606W
MSC0606W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25℃
TA=70℃
TA=25℃
VGS ±20
6.3
ID
4.5
IDM 40
PD 2.0
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
P-Channel
-60
±20
-5
-3.5
-25
2.0
-55 To 150
Unit
V
V
A
A
W
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/8
1 page  
MSC0606W
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Power Dissipatio
Square Wave Pluse Duration (sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MSC0606W.PDF ] | |
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