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MSC4606W fiches techniques PDF

MORESEMI - P & N-Channel Enhancement Mode Power MOS FET

Numéro de référence MSC4606W
Description P & N-Channel Enhancement Mode Power MOS FET
Fabricant MORESEMI 
Logo MORESEMI 





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MSC4606W fiche technique
MSC4606W
N and P-Channel Enhancement Mode Power MOS FET
General Features
N-Channel
VDS = 30V,ID =6.5A
RDS(ON) < 30m@ VGS=10V
P-Channel
VDS = -30V,ID = -7A
RDS(ON) < 33m@ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
N-channel
P-channel
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSC4606W
MSC4606W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25
TA=70
TA=25
VGS ±20
6.5
ID
5.4
IDM 30
PD 2.0
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
P-Channel
-30
±20
-7
-5.8
-30
2.0
-55 To 150
Unit
V
V
A
A
W
MORE Semiconductor Company Limited
http://www.moresemi.com
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