(PDF) MSC4003 Datasheet - RF AND MICROWAVE TRANSISTORS

Número de pieza	MSC4003
Descripción	RF AND MICROWAVE TRANSISTORS
Fabricantes	Advanced Power Technology
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No Preview Available ! 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC4003 Features • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 2.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4003 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is designed for Class C amplifier applications in the 2.0 – 4.4 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter PDISS IC VCC TJ TSTG Power Dissipation* Device Current* Collector Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation Value 14.0 0.5 30 +200 -65 to +200 12.5 Unit W A V °C °C °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 1 page

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PDF MSC4003 Data sheet ( Hoja de datos )