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PDF MSC4963W Data sheet ( Hoja de datos )
| Número de pieza | MSC4963W | |
| Descripción | Dual P-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSC4963W
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -7A
RDS(ON) < 27mΩ @ VGS=-4.5V
RDS(ON) < 39mΩ @ VGS=-2.5V
● High power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Lead Free
Application
● Motor drive
● Load switch
● Power management
PIN Configuration
Marking and pin assignment
SOP-8 top view
D1
G1
G2
D2
S1 S2
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSC4963W
MSC4963W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±12
-7
-40
3.0
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
42 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSC4963W
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSC4963W.PDF ] | |
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