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Número de pieza | MSN0207E | |
Descripción | N-Channel Enhancement Mode Power MOS FET | |
Fabricantes | MORESEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MSN0207E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MSN0207E
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =6.5A
RDS(ON) <40mΩ @ VGS=1.8V
RDS(ON) <33mΩ @ VGS=2.5V
RDS(ON) <27mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Application
● PWM application
● Load switch
PIN Configuration
Lead Free
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0207E
SOT-23
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
6.5
30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
89 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page MSN0207E
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
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5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MSN0207E.PDF ] |
Número de pieza | Descripción | Fabricantes |
MSN0207E | N-Channel Enhancement Mode Power MOS FET | MORESEMI |
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