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Número de pieza | MSN0212W | |
Descripción | N-Channel Enhancement Mode Power MOS FET | |
Fabricantes | MORESEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MSN0212W (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MSN0212W
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
●VDS =20V,ID =12A
RDS(ON) < 8mΩ @ VGS=10V
RDS(ON) < 11mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● DC/DC Converter
● Notebook Vcore
Lead Free
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0212W
MSN0212W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TA=100℃)
ID
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
30
±20
12
8
40
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
50 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page MSN0212W
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Current vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MSN0212W.PDF ] |
Número de pieza | Descripción | Fabricantes |
MSN0212W | N-Channel Enhancement Mode Power MOS FET | MORESEMI |
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