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PDF MSN0212W Data sheet ( Hoja de datos )

Número de pieza MSN0212W
Descripción N-Channel Enhancement Mode Power MOS FET
Fabricantes MORESEMI 
Logotipo MORESEMI Logotipo



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No Preview Available ! MSN0212W Hoja de datos, Descripción, Manual

MSN0212W
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS =20V,ID =12A
RDS(ON) < 8m@ VGS=10V
RDS(ON) < 11m@ VGS=10V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Application
DC/DC Converter
Notebook Vcore
Lead Free
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0212W
MSN0212W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TA=100)
ID
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
30
±20
12
8
40
2.5
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
50 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6

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MSN0212W pdf
MSN0212W
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 Current vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6

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