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PDF MSN0306 Data sheet ( Hoja de datos )
| Número de pieza | MSN0306 | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN0306
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID = 5.8A
RDS(ON) < 59mΩ @ VGS=2.5V
RDS(ON) < 45mΩ @ VGS=4.5V
RDS(ON) < 41mΩ @ VGS=10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Lead Free
Application
● PWM applications
● Load switch
● Power management
PIN Configuration
Marking and pin assignment
D
G
SOT-23 top view
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0306
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±12
5.8
30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
89 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSN0306
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
.
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN0306.PDF ] | |
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