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PDF MSN0310W Data sheet ( Hoja de datos )
| Número de pieza | MSN0310W | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN0310W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =10A
RDS(ON) < 12mΩ @ VGS=10V
RDS(ON) <16mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0310W
MSN0310W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
30
±20
10
6
50
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
50 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSN0310W
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN0310W.PDF ] | |
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