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Número de pieza | MSN0325R | |
Descripción | N-Channel Enhancement Mode Power MOS FET | |
Fabricantes | MORESEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MSN0325R (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MSN0325R
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =25A
RDS(ON) < 10mΩ @ VGS=10V
RDS(ON) < 14mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● SMPS and general purpose applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin Assignment
PIN Configuration
DFN 3x3 EP top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0325R
MSN0325R
DFN 3x3 EP
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
25
17
50
25
0.2
70
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page MSN0325R
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
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5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MSN0325R.PDF ] |
Número de pieza | Descripción | Fabricantes |
MSN0325R | N-Channel Enhancement Mode Power MOS FET | MORESEMI |
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