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MSN0350K fiches techniques PDF

MORESEMI - N-Channel Enhancement Mode Power MOS FET

Numéro de référence MSN0350K
Description N-Channel Enhancement Mode Power MOS FET
Fabricant MORESEMI 
Logo MORESEMI 





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MSN0350K fiche technique
MSN0350K
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS =30V,ID =50A
RDS(ON) < 11m@ VGS=10V
RDS(ON) < 16m@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Lead Free
Application
Power switching application
Hard switched and High frequency circuits
Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0350K
MSN0350K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
50
35
140
60
0.4
70
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
MORE Semiconductor Company Limited
http://www.moresemi.com
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