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Numéro de référence | MSN0350K | ||
Description | N-Channel Enhancement Mode Power MOS FET | ||
Fabricant | MORESEMI | ||
Logo | |||
MSN0350K
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =50A
RDS(ON) < 11mΩ @ VGS=10V
RDS(ON) < 16mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0350K
MSN0350K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
50
35
140
60
0.4
70
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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Pages | Pages 6 | ||
Télécharger | [ MSN0350K ] |
No | Description détaillée | Fabricant |
MSN0350D | N-Channel Enhancement Mode Power MOS FET | MORESEMI |
MSN0350K | N-Channel Enhancement Mode Power MOS FET | MORESEMI |
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