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PDF MSN0409W Data sheet ( Hoja de datos )
| Número de pieza | MSN0409W | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN0409W
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =40V,ID =9A
RDS(ON) < 16mΩ @ VGS=10V
RDS(ON) < 24mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
PIN Configuration
Schematic diagram
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0409W
MSN0409W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
40
±20
9
6.4
40
2
-55 To 150
Unit
V
V
A
A
A
W
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSN0409W
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN0409W.PDF ] | |
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