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PDF MSN0603Y Data sheet ( Hoja de datos )
| Número de pieza | MSN0603Y | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN0603Y
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● VDS =60V,ID =3.0A
RDS(ON) <100mΩ @ VGS=10V
RDS(ON) < 120mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●Battery switch
●DC/DC converter
Lead Free
PIN Configuration
Marking and Pin Assignment
SOT-89 -3L top view
D
G
S
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0603Y
SOT-89-3L
Reel Size
Ø180mm
Tape width
12mm
Quantity
1000units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
3
10
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
73.5 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSN0603Y
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN0603Y.PDF ] | |
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