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MSN0608W fiches techniques PDF

MORESEMI - N-Channel Enhancement Mode Power MOS FET

Numéro de référence MSN0608W
Description N-Channel Enhancement Mode Power MOS FET
Fabricant MORESEMI 
Logo MORESEMI 





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MSN0608W fiche technique
MSN0608W
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS = 60V,ID =8A
RDS(ON) < 20m@ VGS=10V
(Typ:14.5m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Lead Free
Application
Power switching application
Load switch
PIN Configuration
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0608W
MSN0608W
SOP-8
Reel Size
-
Tape width
-
Quantity
2500 units
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
60
±20
8
5.6
32
2.1
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
60 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
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