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PDF MSN06B0F Data sheet ( Hoja de datos )
| Número de pieza | MSN06B0F | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN06B0F
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● VDS =60V,ID =100A
RDS(ON) < 6.5mΩ @ VGS=10V
(Typ:5.7mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN06B0F
MSN06B0F
TO-220F
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
100
70
320
45
0.3
550
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSN06B0F
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN06B0F.PDF ] | |
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