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MSN06B0K fiches techniques PDF

MORESEMI - N-Channel Enhancement Mode Power MOS FET

Numéro de référence MSN06B0K
Description N-Channel Enhancement Mode Power MOS FET
Fabricant MORESEMI 
Logo MORESEMI 





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MSN06B0K fiche technique
MSN06B0K
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
VDS =60V,ID =100A
RDS(ON) < 6.5m@ VGS=10V
(Typ:5.7m)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Lead Free
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN06B0K
MSN06B0K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
100
70
320
170
1.13
550
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
MORE Semiconductor Company Limited
http://www.moresemi.com
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