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PDF MSN15B5H Data sheet ( Hoja de datos )
| Número de pieza | MSN15B5H | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
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MSN15B5H
150V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDSS =150V,ID =150A
RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ）
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
Lead Free
TO-247 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN15B5H
MSN15B5H
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
ID
ID (100℃)
IDM
PD
EAS
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
150
±20
150
106
600
460
3.07
3100
18.5
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page  
MSN15B5H
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperatur
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MSN15B5H.PDF ] | |
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