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HY3208P fiches techniques PDF

HOOYI - N-Channel Enhancement Mode MOSFET

Numéro de référence HY3208P
Description N-Channel Enhancement Mode MOSFET
Fabricant HOOYI 
Logo HOOYI 





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HY3208P fiche technique
HY3208P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
80V/120A
R=
DS(ON)
7.0
m
(typ.)
@
V =10V
GS
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3M
DS
G
TO-263-2L
Applications
Power Management for Inverter Systems.
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P
HY3208
YYÿ XXXJWW G
PS
HY3208
YYÿ XXXJWW G
M
HY3208
YYÿ XXXJWW G
PM
HY3208
YYÿ XXXJWW G
B
HY3208
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
PM: TO-3PS-3M
M : TO-220FB-3M
PS: TO-3PS-3L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
150505

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