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Número de pieza DMC1016UPD
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC1016UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Device V(BR)DSS
Q1 12V
Q2 -20V
RDS(ON)
17mΩ @ VGS = 4.5V
25mΩ @ VGS = 2.5V
20mΩ @ VGS = -4.5V
25mΩ @ VGS = -2.5V
ID
TA = +25°C
9.5A
7.8A
-8.7A
-7.8A
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize RDS(ON) and yet maintain
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Features and Benefits
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate for Q2 P-Channel
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: PowerDI5060-8 (Type C)
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram Below
Weight: 0.097 grams (Approximate)
Top View
Pin1
Bottom View
D1 D2
S1
G1 G2
G1
S2
S1
Q1 N-Channel MOSFET
G2
Gate Protection
Diode
S2
Q2 P-Channel MOSFET
Top View
Pin Configuration
D1
D1
D2
D2
Ordering Information (Note 4)
Notes:
Part Number
DMC1016UPD-13
Case
PowerDI5060-8 (Type C)
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
C1016UD
YY WW
= Manufacturer’s Marking
C1016UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
S1 G1 S2 G2
POWERDI is a registered trademark of Diodes Incorporated.
DMC1016UPD
Document number: DS37799 Rev. 2 - 2
1 of 10
www.diodes.com
March 2016
© Diodes Incorporated

1 page




DMC1016UPD pdf
Typical Characteristics - N-CHANNEL (Cont.)
0.02
1.5
DMC1016UPD
0.015
VGS = 2.5V, ID = 10A
1
0.01
ID = 1mA
VGS = 4.5V, ID = 15A
0.5
0.005
ID = 250µA
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with Junction
Temperature
30
VGS = 0V
25
20
15
10
TJ = 150oC
TJ = 85oC
5 TJ = 125oC
0
TJ = 25oC
TJ = -55oC
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
8
1.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Threshold Variation vs Junction
Temperature
10000
f=1MHz
1000
100
Ciss
Coss
Crss
10
0
100
2 4 6 8 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
RDS(ON)
Limited
12
6 10
4
VDS = 6V, ID = 11.8A
2
0
0 5 10 15 20 25 30
Qg (nC)
Figure 11. Gate Charge
POWERDI is a registered trademark of Diodes Incorporated.
DMC1016UPD
Document number: DS37799 Rev. 2 - 2
35 40
DC
1 PW =10s
PW =1s
0.1
0.01
PW =100ms
TJ(Max)=150
PW =10ms
TA=25
PW =1ms
Single Pulse
PW =100µs
DUT on 1*MRP Board
VGS=4.5V
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
5 of 10
www.diodes.com
March 2016
© Diodes Incorporated

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