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ACE5208 Datasheet دیتاشیت PDF دانلود

دیتاشیت - ACE Technology - P-Channel Power MOSFET

شماره قطعه ACE5208
شرح مفصل P-Channel Power MOSFET
تولید کننده ACE Technology 
آرم ACE Technology 


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ACE5208 شرح
ACE5208
P-Channel Power MOSFET
Description
The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltage.
This device is suitable for use as a load switching application and a wide variety of other applications.
Features
Advanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
Applications
PWM application
Load switch
Battery charge in cellular handset
Absolute Maximum Ratings
Parameter
Symb
ol
Max
Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS -12 V
VGS ±8
Drain Current-Continuous
Drain Current-Pulsed (note 1)
ID
-6
A
IDM -20
Power Dissipation (note 2, TA=25)
Maximum Power Dissipation (note 3, TC=25)
PD
1.5
W
12
Thermal Resistance from Junction to Ambient (note 4) RθJA
Thermal Resistance from Junction to case (note 4) RθJC
83.3
/W
10.4
Junction Temperature
Storage Temperature
TJ
150
TSTG -55~+150
Packaging Type
VER 1.1 1

قانون اساسیصفحه 6
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