DataSheetWiki

ACE5213A Datasheet دیتاشیت PDF دانلود

دیتاشیت - ACE Technology - P-Channel Enhancement Mode MOSFET

شماره قطعه ACE5213A
شرح مفصل P-Channel Enhancement Mode MOSFET
تولید کننده ACE Technology 
آرم ACE Technology 


1 Page

		

No Preview Available !

ACE5213A شرح
ACE5213A
P-Channel Enhancement Mode MOSFET
Description
The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high density process is especially tailored to minimize
on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
Application
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS -20 V
Gate-Source Voltage
Continuous
Drain
Current
(TJ=150)
TA=25
TA=70
VGSS
ID
±12
-0.45
-0.35
V
A
Pulsed Drain Current
IDM -1.0 A
Continuous Source Current (Diode Conduction) IS -0.3 A
Power Dissipation
TA=25
TA=70
PD
0.27
W
0.16
Operating Junction Temperature
TJ -55/150 OC
Storage Temperature Range
TSTG -55/150 OC
VER 1.1 1

قانون اساسیصفحه 6
دانلود [ ACE5213A دیتاشیت ]



دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
ACE5213A P-Channel Enhancement Mode MOSFET ACE Technology
ACE Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2018   |   تماس با ما  |   جستجو