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PDF ACE5213A Data sheet ( Hoja de datos )
| Número de pieza | ACE5213A | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE5213A
P-Channel Enhancement Mode MOSFET
Description
The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high density process is especially tailored to minimize
on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
• P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
• Super high density cell design for extremely low RDS (ON)
• Exceptional on-resistance and maximum DC current capability
Application
• Drivers : Relays/Solenoids/Lamps/Hammers
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS -20 V
Gate-Source Voltage
Continuous
Drain
Current
(TJ=150℃)
TA=25℃
TA=70℃
VGSS
ID
±12
-0.45
-0.35
V
A
Pulsed Drain Current
IDM -1.0 A
Continuous Source Current (Diode Conduction) IS -0.3 A
Power Dissipation
TA=25℃
TA=70℃
PD
0.27
W
0.16
Operating Junction Temperature
TJ -55/150 OC
Storage Temperature Range
TSTG -55/150 OC
VER 1.1 1
1 page  
Packing Information
SOT-523
ACE5213A
P-Channel Enhancement Mode MOSFET
VER 1.1 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ACE5213A.PDF ] | |
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