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ACE6428B Datasheet دیتاشیت PDF دانلود

دیتاشیت - ACE Technology - N-Channel Enhancement Mode Field Effect Transistor

شماره قطعه ACE6428B
شرح مفصل N-Channel Enhancement Mode Field Effect Transistor
تولید کننده ACE Technology 
آرم ACE Technology 


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ACE6428B شرح
ACE6428B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
VDS(V)=30V
ID=43A (VGS=10V)
RDS(ON)10mΩ (VGS=10V)
RDS(ON)14.5mΩ (VGS=4.5V)
100% Delta Vsd Tested
100% Rg Tested
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Continuous) TA=25 OC
TA=100 OC
ID
43
27 A
Drain Current (Pulse) C
IDM 80
Drain Current (Continuous)
TA=25 OC
TA=70 OC
IDSM
11
A
8
Power Dissipation B
TA=25 OC
TA=100 OC
PD
30
W
12
Power Dissipation A
TA=25 OC
TA=70 OC
PDSM
2
W
1.3
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Thermal Characteristics
Parameter
Symbol Typ Max Units
Maximum Junction-to-Ambient A
t10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
21 25 /W
50 60 /W
Maximum Junction-to-Case Steady-State RθJC 3.5 4.2 /W
VER 1.2 1

قانون اساسیصفحه 8
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