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C3M0065100K fiches techniques PDF

Cree - Silicon Carbide Power MOSFET

Numéro de référence C3M0065100K
Description Silicon Carbide Power MOSFET
Fabricant Cree 
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C3M0065100K fiche technique
VDS 1000 V
C3M0065100K
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 65 m
N-Channel Enhancement Mode
Features
Package
New C3MTM SiC MOSFET technology
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Applications
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
TAB
Drain
1 234
D SSG
Drain
(Pin 1, TAB)
Gate
(Pin 4)
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Part Number
C3M0065100K
Package
TO 247-4
Marking
C3M0065100K
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID Continuous Drain Current
1000
-8/+19
-4/+15
35
22.5
ID(pulse) Pulsed Drain Current
90
EAS Avalanche energy, Single pulse
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
110
113.5
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C
A
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
mJ ID = 22A, VDD = 50V
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note: 1
Note: 2
Fig. 19
Fig. 22
Fig. 20
1 C3M0065100K Rev. -, 09-2016

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