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Numéro de référence | C3M0065100K | ||
Description | Silicon Carbide Power MOSFET | ||
Fabricant | Cree | ||
Logo | |||
1 Page
VDS 1000 V
C3M0065100K
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
•
•
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
TAB
Drain
1 234
D SSG
Drain
(Pin 1, TAB)
Gate
(Pin 4)
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Part Number
C3M0065100K
Package
TO 247-4
Marking
C3M0065100K
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID Continuous Drain Current
1000
-8/+19
-4/+15
35
22.5
ID(pulse) Pulsed Drain Current
90
EAS Avalanche energy, Single pulse
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
110
113.5
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C
A
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
mJ ID = 22A, VDD = 50V
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note: 1
Note: 2
Fig. 19
Fig. 22
Fig. 20
1 C3M0065100K Rev. -, 09-2016
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Pages | Pages 11 | ||
Télécharger | [ C3M0065100K ] |
No | Description détaillée | Fabricant |
C3M0065100K | Silicon Carbide Power MOSFET | Cree |
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