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PDF DN2540 Data sheet ( Hoja de datos )
| Número de pieza | DN2540 | |
| Descripción | N-Channel Depletion-Mode Vertical DMOS FETs | |
| Fabricantes | Supertex | |
| Logotipo |  |
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Supertex inc.
DN2540
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
►► High input impedance
►► Low input capacitance
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
Applications
►► Normally-on switches
►► Solid state relays
►► Converters
►► Linear amplifiers
►► Constant current sources
►► Power supply circuits
►► Telecom
Ordering Information
Part Number
Package Option Packing
DN2540N3-G
TO-92
1000/Bag
DN2540N3-G P002
DN2540N3-G P003
DN2540N3-G P005 TO-92
2000/Reel
DN2540N3-G P013
DN2540N3-G P014
DN2540N5-G
TO-220
50/Tube
DN2540N8-G
TO-243AA (SOT-89) 2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSX
BVDGX
±20V
Operating and storage
temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
General Description
The Supertex DN2540 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Product Summary
BVDSX/BVDGX
RDS(ON)
(max)
400V
25Ω
Pin Configuration
DRAIN
IDSS
(min)
150mA
SOURCE
DRAIN
GATE
TO-92
DRAIN
SOURCE
GATE
DRAIN
TO-220
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Typical Thermal Resistance
Package
TO-92
θja
132OC/W
TO-220
29OC/W
TO-243AA (SOT-89)
133OC/W
Doc.# DSFP-DN2540
B060313
Supertex inc.
www.supertex.com
1 page  
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
1.10
VGS = -5.0V
1.05
1.00
0.95
0.90
-50 0
50 100
Tj (OC)
Transfer Characteristics
0.40
VDS = 10V
TA = -55OC
0.32
25OC
150
0.24
125OC
0.16
0.08
0-3 -2
-1 0
12
VGS (Volts)
Capacitance Vs. Drain-to-Source Voltage
200
CISS
f = 1MHz
VGS = -10V
150
100
COSS
50
CRSS
0
0
10
20
VDS (Volts)
30
40
DN2540
On-Resistance vs. Drain Current
100
VGS = 0V
80
60
40
20
0
0 80 160 240 320 400
ID (milliamps)
VGS(OFF) and RDS(ON) Variation with Temperature
2.5
2.0
RDS(ON) @ ID = 120mA
1.5
VGS(OFF) @ 10µA
1.0
0.5
0-50 0
50 100
150
Tj (OC)
Gate Drive Dynamic Characteristics
15
10
5
VDS = 20V
200pF
0
VDS = 40V
-5
170pF
0 0.4 0.8 1.2 1.6
QC (Nanocoulombs)
2.0
Doc.# DSFP-DN2540
B060313
Supertex inc.
5 www.supertex.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DN2540.PDF ] | |
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