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Numéro de référence | HG2N60 | ||
Description | N-Channel Mosfet Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Drain Current –ID= 2A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·High efficiency switch mode power supply.
Charger
UPS power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Plused
PD Total Dissipation @TC=25℃
Tj Max. Operating Junction Temperature
Tstg Storage Temperature
isc Product Specification
HG2N60
VALUE
600
±30
2
6
50
150
-55~150
UNIT
V
V
A
A
W
℃
℃
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ HG2N60 ] |
No | Description détaillée | Fabricant |
HG2N60 | N-Channel Mosfet Transistor | Inchange Semiconductor |
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